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| AP03N70H/J-H Pb Free Plating Product Advanced Power Electronics Corp. Repetitive Avalanche Rated Fast Switching Speed Simple Drive Requirement RoHS Compliant G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 700V 4.4[ 2.5A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for AC/DC converters. The through-hole version (AP03N70J) is available for lowprofile applications. G D S TO-252(H) G DS TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25J ID@TC=100J IDM PD@TC=25J EAS IAR TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating 700 30 2.5 1.6 8 54.3 0.44 2 Units V V A A A W W/J mJ A J J Total Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy Avalanche Current Storage Temperature Range Operating Junction Temperature Range 31 2.5 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.3 110 Units J /W J /W Data & specifications subject to change without notice 200417062-1/4 AP03N70H/J-H Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS GB VDSS/G Tj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=1mA Min. 700 2 - Typ. 0.6 2 12 3 4 8.5 6 19 8 590 50 6 3.4 Max. Units 4.4 4 10 100 100 20 950 5.1 V V/J [ V S uA uA nA nC nC nC ns ns ns ns pF pF pF [ Breakdown Voltage Temperature Coefficient Reference to 25J , ID=1mA RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VGS=10V, ID=1.6A VDS=VGS, ID=250uA VDS=10V, ID=1.6A VDS=600V, VGS=0V VDS=480V, VGS=0V VGS=30V ID=1A VDS=480V VGS=10V VDD=300V ID=2.5A RG=10[, VGS=10V RD=120[ VGS=0V VDS=25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 3 Source-Drain Diode Symbol VSD trr Qrr Notes: 1.Pulse width limited by safe operating area. 2.Starting Tj=25oC , VDD=50V , L=10mH , RG=25[ 3.Pulse width <300us , duty cycle <2%. , IAS=2.5A. Parameter Forward On Voltage 3 2 Test Conditions IS=2.5A, VGS=0V IS=2.5A, VGS=0V, dI/dt=100A/s Min. - Typ. 407 2110 Max. Units 1.5 V ns nC Reverse Recovery Time Reverse Recovery Charge 2/4 AP03N70H/J-H 4 3 T C =25 C 3 o 10V 6.0V 2 T C =150 C o 10V 5.0V ID , Drain Current (A) ID , Drain Current (A) 2 4.5V 2 5.0V 1 1 4.0V 1 4.5V V G =4.0V 0 0 5 10 15 20 25 V G =3.5V 0 0 5 10 15 20 25 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 1.2 3.0 1.1 I D =2.5A V G =10V Normalized RDS(ON) -50 0 50 100 150 2.0 Normalized BVDSS (V) 1.0 1.0 0.9 0.8 0.0 -50 0 50 100 150 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) Fig 3. Normalized BVDSS v.s. Junction Temperature 100 5 Fig 4. Normalized On-Resistance v.s. Junction Temperature 10 4 T j = 150 o C IS (A) 1 T j = 25 o C VGS(th) (V) 3 0.1 2 0.01 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1 -50 0 50 100 150 V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3/4 AP03N70H/J-H f=1.0MHz 16 10000 VGS , Gate to Source Voltage (V) I D =1A V DS =480V 12 C iss C (pF) 8 100 C oss 4 C rss 0 0 5 10 15 1 1 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 10 1 100us 1 Normalized Thermal Response (Rthjc) DUTY=0.5 0.2 0.1 0.05 ID (A) 1ms 10ms 100ms DC o T c =25 C Single Pulse 0.01 1 10 100 1000 10000 0.1 0.02 0.01 PDM 0.1 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.00001 0.0001 0.001 0.01 0.1 1 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform 4/4 |
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